Biexcitons in GaN and AlGaN epitaxial layersYAMADA, Yoichi.Proceedings - Electrochemical Society. 2004, pp 326-340, issn 0161-6374, isbn 1-56677-419-5, 15 p.Conference Paper

Enhanchement of ionization efficiency of acceptors by their excited states in heavily doped P-type GaN and wide bandgap semiconductorsMATSUURA, Hideharu.Proceedings - Electrochemical Society. 2004, pp 570-581, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

Direction of excited carriers from low in facets of InGaN microcrystals observed in the highly spatially resolved cathodoluminescent imagesKANIE, H; KOBAYASHI, S.Proceedings - Electrochemical Society. 2004, pp 529-534, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

III-V ternary bulk crystal growth technologyDUTTA, P. S.Proceedings - Electrochemical Society. 2004, pp 134-141, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Preparation of cubic silicon carbide with smooth surface on carbonized porous siliconKOMIYAMA, J; ABE, Y; SUZUKI, S et al.Proceedings - Electrochemical Society. 2004, pp 142-149, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Photoelectrochemical investigation of the etching of GaN in H₃PO₄HEFFERNAN, C; BUCKLEY, D. N; O'RAIFEARTAIGH, C et al.Proceedings - Electrochemical Society. 2004, pp 552-563, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

Effects of nano-sized interface on the electrical resistances of the P-GaAs wafer bondingHAO OUYANG; CHENG, Ji-Hao; YEWCHUNG SERMON WU et al.Proceedings - Electrochemical Society. 2004, pp 60-64, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Au/In₂ bonding of InP-based MOEMSSTRASSNER, M; DION, J; SAGNES, I et al.Proceedings - Electrochemical Society. 2004, pp 172-176, issn 0161-6374, isbn 1-56677-419-5, 5 p.Conference Paper

Optical properties of Gan/AlN quantum dots grown by molecular beam epitaxyNEOGI, A.Proceedings - Electrochemical Society. 2003, pp 188-195, issn 0161-6374, isbn 1-56677-391-1, 8 p.Conference Paper

Spectrometric monitoring method for concentration of hydrogen peroxide in chemical etching solution of gallium arsenideSHIGYO, Kazuhiro; UMEMURA, Sonoko; KINUGAWA, Masaru et al.Proceedings - Electrochemical Society. 2004, pp 51-59, issn 0161-6374, isbn 1-56677-419-5, 9 p.Conference Paper

Studies of electron trapping in III-nitridesCHERNYAK, Leonid; BURDETT, William; LOPATIUK, Olena et al.Proceedings - Electrochemical Society. 2004, pp 512-521, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

High voltage AlGaN/GaN power HEMT for power electronics applicationsOMURA, Ichiro; SAITO, Wataru; TSUDA, Kunio et al.Proceedings - Electrochemical Society. 2004, pp 386-394, issn 0161-6374, isbn 1-56677-419-5, 9 p.Conference Paper

Molecular beam epitaxy of GaN on lattice-matched zirconium diboride substrates using low-temperature GaN and ALN nucleation layersARMITAGE, Rob; SUDA, Jun; KIMOTO, Tsunenobu et al.Proceedings - Electrochemical Society. 2004, pp 484-495, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

Fabrication of indium-doped N-Fe₂O₃ thin films by spray pyrolytic deposition method for photoelectrochemical water splittingINGLER, William B; KHAN, Shahed U. M.Proceedings - Electrochemical Society. 2004, pp 124-133, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

Self-assembled indium nitride nanocolumns grown by molecular beam epitaxyNG, H. M; LIU, R; PONCE, F. A et al.Proceedings - Electrochemical Society. 2004, pp 372-379, issn 0161-6374, isbn 1-56677-419-5, 8 p.Conference Paper

Unique capabilities of chemically-assisted ion-beam etching for compound semiconductor devicesVAWTER, G. Allen; ALFORD, Charles.Proceedings - Electrochemical Society. 2004, pp 35-43, issn 0161-6374, isbn 1-56677-419-5, 9 p.Conference Paper

Characterization of GaN Schottky barrier photodiodes with a low-temperature GaN cap layerLEE, M. L; SHEU, J. K; SU, Y. K et al.Proceedings - Electrochemical Society. 2004, pp 260-269, issn 0161-6374, isbn 1-56677-419-5, 10 p.Conference Paper

Characterization of InGaAs self-mixing detectors for chirp, amplitude-modulated LADAR (CAML)GERHOLD, Mike; ALIBERTI, Keith; HONGEN SHEN et al.Proceedings - Electrochemical Society. 2004, pp 12-23, issn 0161-6374, isbn 1-56677-419-5, 12 p.Conference Paper

An innovative planarization technology for ultra high frequency InP/InGaAs heterojunction bipolar transistor (HBT) manufacturingZENG, X; CHANG, P. C; YAMAMOTO, J et al.Proceedings - Electrochemical Society. 2004, pp 44-50, issn 0161-6374, isbn 1-56677-419-5, 7 p.Conference Paper

Pulse testing of GaN/AlGaN HEMTsBACA, A. G; KIM, Y. M; MARSH, P. F et al.Proceedings - Electrochemical Society. 2004, pp 435-440, issn 0161-6374, isbn 1-56677-419-5, 6 p.Conference Paper

Sensors based on SiC-AIN MEMSDOPPALAPUDI, Dharanipal; MLCAK, Richard; CHAN, Jeffrey et al.Proceedings - Electrochemical Society. 2004, pp 287-299, issn 0161-6374, isbn 1-56677-419-5, 13 p.Conference Paper

Growth and characterization of high-Ge content SiGe virtual substratesERDTMANN, M; CARROLL, M; VINEIS, C. J et al.Proceedings - Electrochemical Society. 2003, pp 106-117, issn 0161-6374, isbn 1-56677-391-1, 12 p.Conference Paper

Effect of the intermetallic compounds on the joint strength of the optical moduleKIM, N. K; KIM, K. S; KIM, N. H et al.Proceedings - Electrochemical Society. 2003, pp 80-86, issn 0161-6374, isbn 1-56677-391-1, 7 p.Conference Paper

Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structuresLAI, Yen-Lin; CHEN, Regime; LIU, Chuan-Pu et al.Proceedings - Electrochemical Society. 2003, pp 174-178, issn 0161-6374, isbn 1-56677-391-1, 5 p.Conference Paper

Localized quantum state luminescence from wide bandgap ZnS and GaN thin filmsSHEPHERD, Nigel; KALE, Ajay; GLASS, William et al.Proceedings - Electrochemical Society. 2003, pp 244-269, issn 0161-6374, isbn 1-56677-391-1, 26 p.Conference Paper